1 MRF5P21180 motorola rf device data the rf sub?micron mosfet line n?channel enhancement?mode lateral mosfet designed for w?cdma base station applications with frequencies from 2110 to 2170 mhz. suitable for tdma, cdma and multicarrier amplifier applications. to be used in class ab for pcn?pcs/cellular radio and wll applications. ? typical 2?carrier w?cdma performance for v dd = 28 volts, i dq = 2 x 800 ma, f1 = 2135 mhz, f2 = 2145 mhz, channel bandwidth = 3.84 mhz, adjacent channels measured over 3.84 mhz bw @ f1 ? 5 mhz and f2 + 5 mhz. distortion products measured over a 3.84 mhz bw @ f1 ? 10 mhz and f2 + 10 mhz, each carrier peak/avg. = 8.5 db @ 0.01% probability on ccdf. output power ? 38 watts avg. power gain ? 14 db efficiency ? 25.5% im3 ? 37.5 dbc acpr ? ?41 dbc ? internally matched, controlled q, for ease of use ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 10:1 vswr, @ 28 vdc, 2140 mhz, 180 watts cw output power ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters ? qualified up to a maximum of 32 v dd operation maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs ?0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 437.5 2.5 watts w/ c storage temperature range t stg ?65 to +150 c operating junction temperature t j 200 c note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. order this document by MRF5P21180/d semiconductor technical data 2170 mhz, 180 w avg., 2 x w?cdma, 28 v lateral n?channel rf power mosfet case 375d?04, style 1 ni?1230 ? motorola, inc. 2002 rev 0
MRF5P21180 2 motorola rf device data thermal characteristics characteristic symbol max unit thermal resistance, junction to case case temperature 80 c, 180 w cw case temperature 80 c, 38 w cw r jc 0.40 0.40 c/w electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics (1) zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0) i dss ? ? 1 adc gate?source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics (1) gate threshold voltage (v ds = 10 vdc, i d = 200 adc) v gs(th) 2.5 2.8 3.5 vdc gate quiescent voltage (v ds = 28 vdc, i d = 800 madc) v gs(q) ? 3.6 ? vdc drain?source on?voltage (v gs = 10 vdc, i d = 2 adc) v ds(on) ? 0.26 0.3 vdc forward transconductance (v ds = 10 vdc, i d = 2 adc) g fs ? 5 ? s dynamic characteristics (1) reverse transfer capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 1.7 ? pf functional tests (in motorola test fixture, 50 ohm system) (2) 2?carrier w?cdma, 3.84 mhz channel bandwidth carriers, acpr and im3 measured in 3.84 mhz bandwidth. peak/avg. = 8.5 db @ 0.01% probability on ccdf. common?source amplifier power gain (v dd = 28 vdc, p out = 38 w avg., i dq = 2 x 800 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz) g ps 12.5 14 ? db drain efficiency (v dd = 28 vdc, p out = 38 w avg., i dq = 2 x 800 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz) 23 25.5 ? % third order intermodulation distortion (v dd = 28 vdc, p out = 38 w avg., i dq = 2 x 800 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz; im3 measured over 3.84 mhz bw @ f1 ?10 mhz and f2 +10 mhz referenced to carrier channel power.) im3 ? ?37.5 ?35 dbc adjacent channel power ratio (v dd = 28 vdc, p out = 38 w avg., i dq = 2 x 800 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz; acpr measured over 3.84 mhz bw @ f1 ? 5 mhz and f2 +5 mhz.) acpr ? ?41 ?38 dbc input return loss (v dd = 28 vdc, p out = 38 w avg., i dq = 2 x 800 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz) irl ? ?14 ?9 db (1) each side of device measured separately. part is internally matched both on input and output. (2) measurements made with device in push?pull configuration.
3 MRF5P21180 motorola rf device data figure 1. MRF5P21180 test circuit schematic z1, z22 1.000 x 0.066 microstrip z2, z21 0.760 x 0.113 microstrip z3, z20 0.068 x 0.066 microstrip z4, z19 1.672 x 0.066 microstrip z5, z6 0.318 x 0.066 microstrip z7, z8 0.284 x 0.180 microstrip z9, z10 0.256 x 0.650 microstrip z11, z12 1.030 x 0.035 microstrip z13, z14 0.500 x 0.650 microstrip z15, z16 0.550 x 0.058 microstrip z17, z18 0.353 x 0.066 microstrip pcb taconic rf?35, 0.76 mm, r = 3.5 table 1. MRF5P21180 test circuit component designations and values part description value, p/n or dwg manufacturer c1, c2, c3, c4 30 pf chip capacitors 100b300jca500x atc c5, c6, c7, c8 5.6 pf chip capacitors 100b5r6jca500x atc c9, c10 10 f tantalum capacitors t495x106k035as4394 kemet c11, c12 1000 pf chip capacitors 100b102jca500x atc c13, c14, c15, c16 0.1 f chip capacitors cdr33bx104akws kemet c17, c18, c19, c20, c21, c22 22 f tantalum capacitors t491x226k035as4394 kemet c23, c24 1.0 f tantalum capacitors t491c105m050 kemet r1, r2, r3, r4 10 , 1/8 w chip resistors r5 1.0 k , 1/8 w chip resistor wb1, wb2, wb3, wb4 wear blocks 5 x 180 x 500 mil brass shim motorola
MRF5P21180 4 motorola rf device data figure 2. MRF5P21180 test circuit component layout cut out area MRF5P21180 rev 5
5 MRF5P21180 motorola rf device data typical characteristics figure 3. 2?carrier w?cdma broadband performance figure 4. two?tone power gain versus output power figure 5. third order intermodulation distortion versus output power figure 6. intermodulation distortion products versus tone spacing figure 7. pulse cw output power versus input power
MRF5P21180 6 motorola rf device data figure 8. 2?carrier w?cdma acpr, im3, power gain and drain efficiency versus output power figure 9. 2-carrier w-cdma spectrum figure 10. ccdf w?cdma 3gpp, test model 1, 64 dpch, 67% clipping, single carrier test signal figure 11. mtbf factor versus junction temperature
7 MRF5P21180 motorola rf device data ? figure 12. series equivalent input and output impedance f mhz z source ? z load ? 2110 2140 2170 5.39 ? j13.89 5.53 ? j14.51 5.66 ? j13.99 3.69 ? j10.51 3.81 ? j10.66 3.79 ? j11.05 z source = test circuit impedance as measured from gate to gate, balanced configuration. z load = test circuit impedance as measured from drain to drain, balanced configuration.
MRF5P21180 8 motorola rf device data package dimensions case 375d?04 issue c
a g l d k 4x q 2x
!!! " n c e m b b (flange) h f r (lid) s (insulator) 4x a t (insulator) (lid) pin 5 4 ni?1230 motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, represen tation, or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the applicati on or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? param eters can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for e ach customer application by customer?s technical experts. motorola does not convey any license under its patent rights nor the rights of others. motorola p roducts are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to s upport or sustain life, or for any other application in which the failure of the motorola product could create a situation where personal injury or death may occur. should buyer purch ase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its officers, employe es, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly o r indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that motorola was negligent reg arding the design or manufacture of the part. motorola and the stylized m logo are registered in the us patent & trademark office. all other product or service names are the property of their respective owners. motorola, inc. is an equal opportunity/affirmative action employer. motorola, inc. 2002. how to reach us: usa/europe/locations not listed : motorola literature distribution; p.o. box 5405, denver, colorado 80217. 1?303?675?2140 or 1?800?441?2447 japan : motorola japan ltd.; sps, technical information center, 3?20?1, minami?az abu. minato?ku, tokyo 106?8573 japan. 8 1?3?3440?3569 asia/pacific : motorola semiconductors h.k. ltd.; silicon harbour centre, 2 da i king street, tai po industrial estate, tai po, n.t. hong kon g. 852?26668334 technical information center: 1?800?521?6274 home page : http://www .motorola.com/semiconductors/ MRF5P21180/d ?
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